Abstract
Secondary electron emission (SEE) yield (δ) of ZnO films has been investigated. The films were deposited in an RF sputtering system, using RF power (W), argon pressure (p), partial O2 pressure (pO2), and substrate temperature (Ts) as parameters. The ratio x = O/Zn is an essential factor which determines δ of the ZnO films.Auger analyses have shown that excess (over-stoichiometric, x > 1) oxygen exists in ZnO films obtained at room temperature. For x > 1, the values of maximum SEE yield δm were found to be higher than those of the stoichiometric ZnO (obtained at Ts > 200°C). The highest value of δm(=4.4) was obtained for x = 1.7.
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