Abstract
The effect of the implanted Si into GaAs on the secondary electron yield was investigated using cross-sectional scanning electron microscopy. In the case of the isothermal annealing at 800 °C for 30 min, the yield was enhanced for the samples implanted at 150 keV with higher doses than 1×1014 cm−2 above which the activation efficiency of the implanted Si went down rapidly. The annealing temperature dependence also showed the enhancement of the yield for the samples with less activation efficiency. Hence, it was suggested that the yield was increased by the defects that reduced the activation efficiency.
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