Abstract

Secondary electron emission from diamond films is studied as a function of the primary electron beam energy and bulk material properties. A formulation of a simple model of the secondary electron emission coefficient, as a function of the primary electron beam energy, has been found to be helpful in defining physical criteria able to guide the optimization of the diamond film electron emission performance. The secondary electron mean escape depth deduced from the model is indeed related to the density of defects in the material and represents the main factor in determining the low energy secondary electron yield. These results are supported by Raman spectroscopy measurements, indicating a lower graphitic content and a higher crystalline quality of the diamond phase in films showing better secondary electron and photoemission yields. We demonstrate that a diamond film, acting as a stable and proportional electron multiplier, can be used as a converter of backscattered electrons into secondary electrons in scanning electron microscopy. It will be shown that the use of a diamond film converter is suitable to improve the signal to noise ratio of images providing an enhanced compositional contrast.

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