Secondary defect profile related to low energy implanted boron measured up to 3.5 µm depth into Si-substrates

Abstract

Low energy implantation is one of the most promising options for ultra shallow junction formation in the next generation of silicon BiCMOS technology. Among the dopants that have to be implanted, boron is the most problematic because of its low stopping power (large penetration depth) and its tendency to undergo transient enhanced diffusion and clustering during thermal activation. This paper reports an experimental study of secondary defect profiles of low energy B implants in crystalline silicon. Shallow p+n junctions were formed by low energy B implantation—1015 cm−2 at 3 keV—into a reference n-type crystalline silicon or pre-amorphized n-Si with germanium −1015 cm−2 at 30 keV, 60 keV, and 150 keV. Rapid Thermal Annealing (RTA) for 15 s at 950°C was then performed. Secondary defect profiles induced by this process are measured with isothermal transient capacitance in association with Deep Level Transient Spectroscopy (DLTS). Relatively high concentrations of electrically active defects have been obtained up to 3.5 µm into the crystalline silicon bulk. The relation of these defects with boron is discussed. The results of this study are in agreement with boron transient enhanced diffusion in Si-substrate as has been reported by Collart using Secondary Ion Mass Spectrometry (SIMS) measurements.