Secondary Defect Formation and Gettering in MeV Self-Implanted Silicon

Abstract

AbstractSecondary defect and impurity distributions in MeV self-implanted Czochralski (Cz) and float-zone (FZ) silicon have been investigated by transmission electron microscopy, optical microscopy with preferential chemical etching, and secondary ion mass spectroscopy. We found that the ion fluence and the oxygen content of the implanted wafers affect the number and depth distribution of extended defects remaining after annealing. Intrinsic oxygen also redistributes during annealing of Cz wafers, producing two regions of relatively high oxygen concentration: one at extended defects near the ion projected range, and another, shallower region, which correlates with the distribution of vacancy-type defects. Both of these regions are also able to getter metallic impurities, depending on the implantation and annealing conditions. These defect issues may adversely affect the quality of the near surface device region, and must be controlled for successful gettering by ion implantation.