Secondary breakdown thermal characterization and improvement of semiconductor devices

Abstract

This paper indicates that the energy dependence of semiconductor devices with respect to secondary breakdown can be explained on the basis of transient thermal resistance. The procedure for determining the transient thermal resistance is described. Results indicate that the thermal time constants of transistors is much shorter than heretofore recognized. Similar results are presented for voltage regulator diodes. In addition, a simple technique is described which significantly increases the thermal time constant of these devices. Similar changes are proposed for other semiconductor devices.