Abstract
Secondary radiation (photoluminescence and Raman scattering) emitted by gallium phosphide single crystals at helium temperatures is investigated. It is established for the first time that, in the case when the secondary emission spectra are excited by a cw low-power He-Ne laser, whose linewidth lies in the transparency region of GaP, anti-Stokes photoluminescence from the bulk of the sample occurs due to interband and impurity recombination. The results obtained make it possible to carry out a qualitative and quantitative analysis of impurities which are present in the bulk of a semiconductor by recording the bulk anti-Stokes photoluminescence spectra at low temperatures.
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