Abstract

YBa2Cu3O7−x (YBCO) films with BaGeO3 (BGeO), BaSiO3 (BSiO) second phase additions were processed by pulsed laser deposition. Sectored targets with BGO or BSiO wedges as well as pre‐mixed targets of YBCO, BGeO or BSiO with appropriate compositions were used to deposit YBCO+BGeO and YBCO+BSiO films on (100) single crystal LaAlO3 substrates. The cross‐sectional transmission electron micrographs showed the presence of 20 nm diameter nanocolumns in the YBCO films of both the compositions. However, the critical transition temperature (Tc) of the films was found to significantly decrease. As a result, the critical current density (Jc) in applied magnetic fields was suppressed. The YBCO+BGeO and YBCO+BSiO films made with lower concentrations of additions showed slight improvement in Tc indicating that the substitution of Ge and Si in the lattice is possibly responsible for the Tc depression. This study shows that in addition to the ability to form nanocolumns, the chemical compatibility of BaSnO3 (BSO) and BaZrO3 (BZO) as observed in YBCO+BSO and YBCO+BZO is critical to process high Jc YBCO films.

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