Abstract
PLD(pulsed laser deposition) method was used to prepare amorphous GeS2-Ga2S3-CdS chalcogenide film. Obvious SHG(second harmonic generation) was observed in electron beam irradiated film by Maker fringe method. According to Raman spectra, we discussed the mechanism of SHG and ascribed the origination of SHG to the local electric field generation under electron beam and uneven charge distribution. With the increase of accelerating voltage and the extension of irradiation time, the SHG intensity increased and reached the maximum, which is due to the enhancement of breakage of glassy isotropy with gradually increased incident electron energy and the finite population of electric dipoles leading to the saturation of SH intensity.
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