Abstract
We have studied second-harmonic generation at midinfrared wavelengths in InAs/GaAs semiconductor self-assembled quantum dots. We show that resonant second-harmonic generation associated with the intraband transitions of the quantum dots can be achieved in p-type samples. Frequency doubling is observed both for a TM- and a TE-polarized infrared excitation. A peak susceptibility value of 2×10 −7 m/ V at 168 meV is deduced for one quantum dot layer. The peak susceptibility results from the achievement of the double resonance between the optical pump field and the h 1–h 8 and h 1–h 29 intraband transitions.
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