Second harmonic generation in In 2O 3–SiON films doped by Al and Sn

Abstract

Photoinduced optical and second-order non-linear optical effects in the interfaces separating In 2O 3–SiON (O/N ratio equals 1) films doped with A1, Sn and glass substrates were investigated using the photoinduced optical second harmonic generation. The photoinduced effective second-order optical susceptibility d eff (at λ=1.76 μm ) shows a good correlation with the linear optical susceptibility, particularly with the shift of the absorption edge. The maximal response of the photoinduced optical response signal was observed for the pump–probe delaying time of 34 ps . The performed experimental measurements indicate that the observed effects are mainly caused by the interface potential gradients on the border glass–In 2O 3–SiON film and by additional polarization due to insertion of the Al and Sn atoms. The observed phenomenon may be proposed as a sensitive tool for investigation of thin semiconducting interfacial layers and simultaneously such films may be used as materials for non-linear optical devices.