Abstract
It is demonstrated that as-grown e-beam deposited SiOx thin films on fused silica substrates show a second-order nonlinear response that is dependent on film thickness. Using a Maker fringes method the effective nonlinear coefficient for a SiO thin film is estimated to be comparable to that of crystalline quartz. Variation of process parameters has been used to investigate the origin of the nonlinear response. The second-harmonic signal is very sensitive to annealing of the film and can be totally removed by annealing at a few hundred degrees. It is also demonstrated that a retarding grid that traps charged particles between the crucible and the sample reduces the nonlinear signal from a SiO thin film significantly. It is suggested that oriented dipoles arise during deposition due to a negatively charged film from oxygen ions, thus, resulting in a non-centrosymmetric film. Finally, using e-beam lithography, well-defined nonlinear 2D structures can be synthesized, thus opening the door to a new and practical way to create nonlinear structures for planar waveguide technology.
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