Abstract

In the era of Big Data and Internet of Things (IoT), information security has emerged as an essential system and application metric. The information exchange among the ubiquitously connected smart electronic devices requires functioning reliably in harsh environments, which highlights the need for securing the hardware root of trust. In this work, by leveraging the uniform nonlinear resistive switching of emerging electroforming-free analog memristive device based on <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$\mathbf {BiFeO}_3$</tex-math></inline-formula> (BFO) thin film, the security-oriented hardware primitive (SoHP) system is developed and optimized with high-security level. The SoHP system utilizes the distinguishable power conversion efficiency generated at second and higher harmonics in low resistance state (memristor with diodelike behavior) and high resistance state (memristor with high resistive behavior) of memristive devices. By exploring the significant influence of writing bias and operational frequency in sourcing input voltage on the dynamic switching behavior of memristive device, the novel 2-memristor encoding scheme and 1-memristor decoding scheme are developed for SoHP system, which realizes a frequency enhancement of 4000 times in comparison to 1-memristor encoding scheme and 2-memristor decoding scheme. The encoded data bits that generated from physically implemented SoHP system pass diverse statistical test suites (i.e. ENT, BSI, and NIST SP-800.22 statistical test suites), which indicates the high randomness distribution of the encoded data and the high-security level of the proposed memristive encoding system.

Highlights

  • W ITH the widespread application of electronic systems in communication devices, the demand for secure hardware and secure data transmission has been dramatically increased

  • In this work, based on the nonvolatile nonlinear switching dynamic of BFO memristive devices, we study the impact of writing bias and operational frequency on the generated second harmonic power efficiency, and further optimized the design schematics of the BFO memristor based security-oriented hardware primitive (SoHP) on PCB board, i.e. SoHP-PCB system with 2-memristor

  • The concentrated reading currents at small reading bias, e.g. at 2 V, in low resistance state (LRS) and high resistance state (HRS) from 1000 cycles of IV characteristic reveal ultra-uniform switching behavior of BFO memristor in comparison to other types of memristive devices [27]–[29], which fundamentally ensures the stability of the second harmonic generation in the BFO memristor based SoHP system

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Summary

INTRODUCTION

W ITH the widespread application of electronic systems in communication devices, the demand for secure hardware and secure data transmission has been dramatically increased. In the recent years, forming-free BiFeO3 (BFO) memristors have drawn much attention due to highly uniform switching performance with excellent endurance and retention properties [17]–[19] and their promising applications in neuromorphic computing [16], [20]–[22], reconfigurable Boolean logics [23], [24], and in our previous work [25], we have demonstrated the hardware security system by exploiting the second of harmonic generation functionality of analog BFO memristive devices. In this work, based on the nonvolatile nonlinear switching dynamic of BFO memristive devices, we study the impact of writing bias and operational frequency on the generated second harmonic power efficiency, and further optimized the design schematics of the BFO memristor based security-oriented hardware primitive (SoHP) on PCB board, i.e. SoHP-PCB system with 2-memristor. For investigating the security level of the implemented SoHP system, the randomness test result of encrypted data by using NIST SP-800.22 statistical test suite reveals the security level of the optimized memristive SoHP system

HIGH EFFICIENT SECOND HARMONIC GENERATION EXPLOITING BFO MEMRISTIVE DEVICES
BFO Memristive Devices With Nonlinear High Uniform Switching Behavior
Power Conversion Efficiency Based on Memristive Device
BFO MEMRISTOR BASED SECURITY-ORIENTED HARDWARE SYSTEM
SUMMARY AND OUTLOOK
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