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Abstract
Simulations of the SEB hardness of power MOSFETs are carried out with an experimentally calibrated structure. The effects of incorporating high permittivity gate dielectric layers and increasing channel doping concentration are investigated. The simulation results indicate that high-k dielectrics and high channel doping are promising methods to achieve SEB-hardened power MOSFETs. This offers a potential path to power MOSFETs that are resistant to SEB with thinner, more radiation-tolerant gate dielectrics.
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