Abstract
Results on the dependences of focus and exposure dose latitudes on the numerical aperture of lithographic g-line, i-line, and KrF exposure systems are given for 0.6, 0.8 and 1.0 um lines and spaces. This is done for two different resist systems by both SAMPLE 1.7 simulations and g-line experiments. The data are analysed by the use of k-factors and show some unique behavior that is strongly resist dependent.
Published Version
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