Abstract
The surface pores of a porous low-k dielectric layer were sealed by a smooth coating of silica just a few nanometers thick. Atomic layer deposition (ALD) of tungsten nitride (WN) onto the smooth silica surface provided a very thin (1.5 nm) barrier to the diffusion of copper. Without the silica sealing layer, ALD WN penetrated through the low-k dielectric. Strong adhesion was demonstrated for the structure Si/porous dielectric/SiO 2 /WN/Co/Cu, in which the top four layers were formed by ALD. This structure is stable to at least 400°C and is suitable for making narrow interconnects for future microelectronics.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
