Abstract
Bipolar conduction in Bi-Te-based alloys is a critical barrier to high conversion efficiency in thermoelectric power generation applications. Herein, we investigate the effect of Te/Se ratio control on bipolar conduction in n-type Cu0.008Bi2(Te,Se)3. Based on the two-band model and Callaway model, we found that electronic and thermal transports of minority carriers (holes) were gradually decreased with an increase in Se content. The high-temperature power factor of Se-rich Cu0.008Bi2Te2.1Se0.9 was higher in value compared to reference Cu0.008Bi2Te2.7Se0.3 due to the weighted mobility ratio increase, and its bipolar thermal conductivity was significantly reduced simultaneously. As a result, a peak figure of merit (zT) of 0.92 was obtained at 440 K in Cu0.008Bi2Te2.1Se0.9.
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