Abstract
S-doped SiO 2 microspheres have been successfully synthesized via the thermal evaporation method using S powders as the reducing agents. The as-synthesized products have been systematically studied by X-ray powder diffraction (XRD), Raman spectroscopy (RS), scanning electron microscope (SEM), electron energy-dispersive X-ray (EDX) and photoluminescence (PL). The results indicate that pure S-doped SiO 2 microspheres were collected at the growth temperatures of 730 °C. Furthermore, The RT PL spectral results reveal the S-doped SiO 2 microspheres have a stable and strong green emission band. The products are available for the applications in optoelectronic semiconductor devices with improving performances.
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