Abstract
The time-resolved photoluminescence kinetics of GaSe has been measured at room temperature. The rise time of the spontaneous-emission band is within the response time of the picosecond laser pulse duration and streak camera (\ensuremath{\le}20 ps) when the photogenerated carrier density is below 5 \ifmmode\times\else\texttimes\fi{} ${10}^{18}$ ${\mathrm{cm}}^{\ensuremath{-}3}$ and increases to a measurable value when the carrier density is above 5 \ifmmode\times\else\texttimes\fi{} ${10}^{18}$ ${\mathrm{cm}}^{\ensuremath{-}3}$. The increase in the rise time of the spontaneous-emission band arises from the screening of nonpolar optical-phonon emission from hot photogenerated carriers due to high photogenerated carrier density. On the other hand, the rise time of the stimulated-emission band is not time resolved with increasing picosecond laser pulse intensity.
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