Abstract
For pt.I see ibid., vol.7, p.1136 (1974). The Fourier transform nu (q) of the screened Coulomb potential of a charged impurity in a semiconductor in a strong magnetic field is calculated in the linear-response approximation, taking account of the broadening of levels due to scattering at the impurities. The effect of the broadening on the strength of the potential nu (0) and on the root-mean-square ranges of the potential along and perpendicular to the field is studied as a function of the field and of the level width.
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