Abstract
We present a technique for studying the effect of screening long-range Coulomb interactions in a 2D system using a bilayer heterostructure. It allows us to vary the distance between a 2D system and a screening ground plane in the same sample and cooldown, and hence without changing the disorder potential. We implement this technique in a 2D hole system in GaAs, and examine the effect of screening on the 2D metallic behaviour.
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