Abstract
Mutual screening of charged impurities in bulk compensated semiconductors is described. Several models for analytical treatment are discussed. Monte Carlo simulations of impurity relaxation in disordered systems at non-zero temperatures are performed. Pair distribution functions are obtained. A structure of the screened acceptor-donor-electron complex is studied. Friedel-like oscillations in a screening charge distribution are observed. The matrix element for electron scattering and electron mobility is calculated. Remarkable behaviour at small wavevectors is observed. Essential corrections against standard models at the limit of zero temperature are found.
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