Screening effects in two-dimensional electron gas

Abstract

The potential produced by a charged impurity at the interface of a highly doped GaAlAs and GaAs is calculated at a finite temperature. The electron gas formed at the interface is described as a two dimensional gas in which the impurity is assumed to be dipped. Temperature dependence of the impurity potential is calculated in the random phase approximation (R.P.A.) as well as in the modified temperature dependent Thomas-Fermi (M.T.T.F.) approximation which is defined to include temperature effects and to reduce to Thomas-Fermi result at zero temperature. The binding energy of the impurity for the ground state is calculated in R.P.A. and in M.T.T.F.. It is shown that at temperature T, much larger than the Fermi temperature, TF, M.T.T.F. gives binding energies close to R.P.A. results.