Screening effects in (111)B AlGaAs-InGaAs single quantum well heterostructures

Abstract

A reduction in luminescence decay time and a shift toward higher optical transition energy is observed in response to an increase in photogenerated carrier density for a p-i-n (111)B Al0.15Ga0.85As-In0.055Ga0.945As strained-layer single quantum well heterostructure. These effects, which are attributed to free-carrier screening of the strain-induced electric field, are expected to be useful for designing novel optoelectronic devices that exploit the unique electro-optic properties of (111) strained quantum wells.