Abstract
Two types of wet cleaning solutions were screened for post etch residue removal in back end of line applications: aqueous acid chemistries and organic solvents. Their compatibility with plasma damaged low-k materials and their polymer removal efficiency were checked on blanket low-k layers and single damascene layers, respectively. Aqueous acid chemistries under study showed either to be compatible with plasma damaged low k material but had poor polymer removal efficiency, or showed good polymer removal but also removal of the plasma damaged low-k. A correlation between the damaged low-k and the amount of etching additive in aqueous acid chemistry could be established. Initial tests with organic solvents demonstrated that they were compatible with the damage low-k layer. Concerning polymer removal, some partial dissolution of polymers was observed for the first time. Furthermore, the cleaning performance of organic solvents, and hence the electrical performance, can be improved by applying megasonic power during the clean process.
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