Abstract
A simplified model is proposed for analyzing the electric potential around a charged dislocation in piezoelectric semiconductors. In the analysis of the order of the Debye length, the solution for the piezoelectric potential screened by the carriers and ionized impurities is obtained. Consideration of the electrostatic potential field near the dislocation complete the determination of the solution. Numerical calculations of the potential are made for GaAs.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
