Screen printing of silver nanoparticles on the source/drain electrodes of organic thin-film transistors

Abstract

Herein, we systematically investigate the screen printing of Ag nanoparticle (AgNP) inks for the use of source and drain (S/D) electrodes of organic thin-film transistors (OTFTs), controlling printing process condition such as printing speed annealing temperature, as well as the surface modification for the substrate. The optimization of screen-printed AgNPs showed high electrical conductivity, nice pattern-fidelity and good adhesion to the substrate. Although the printed AgNP pattern indicated the thickness of about 11 μm (measured at the center area of the pattern) which is too high compared with that of semiconductor layer (∼100 nm), the edge side of the pattern showed the trapezoid shape with an angle of 18.2° enabling the feasible charge injection and extraction between electrodes and semiconductor layer. Based on the optimized AgNP S/D electrode, the OTFTs with 2,9-di-decyl-dinaphtho-[2,3-b:2,3-f]-thieno-[3,2-b]thiophene (C 10 -DNTT) semiconductor layer were fabricated on Si/SiO 2 and flexible polyethylene terephthalate (PET) substrates with bottom-gate, bottom-contact (BGBC) and top-gate, bottom-contact (TGBC) device structure, respectively. Consequently, BGBC on Si/SiO 2 showed the best device performance, with a μ FET of 0.186 cm 2 V −1 s −1 and threshold voltage ( V th ) of −0.41 V. In addition, TGBC OTFTs on the PET substrate obtained an electrical performance with a μ FET of 0.012 cm 2 V −1 s −1 . • Screen-printed Ag nanoparticle (AgNP) patterns were applied as source/drain electrodes of organic thin-film transistors. • The printed AgNP showed high electrical conductivity, nice pattern fidelity, and good adhesion to the substrate. • The printed AgNP electrode had a thickness of about 11 μm and a trapezoidal edge with an angle of 18.2°.