Abstract
In this letter, Si paste formed by p-type Si nanoparticles (NPs) and an organic solvent is used as the source of B. Si NPs with a diameter of $\sim 30$ nm are prepared using the pulsed electrical discharge method. The preprocessed Si wafers (after laser opening) are used as the substrate. Si paste with different percentages of Si NPs is screen-printed above the openings. B atoms diffuse into Si wafers through annealing. Uniform doping profiles are observed under a laser scanning microscope. The B doping is successful as evidenced by secondary ion mass spectroscopy.
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