Scratching by pad asperities in chemical–mechanical polishing

Abstract

In the fabrication of micro- and nano-scale semiconductor devices and electromechanical systems, the chemical–mechanical polishing (CMP) process is extensively employed. During the CMP process, undesirable scratches are produced on metal-interconnect and low- k-dielectric surfaces by the softer pad asperities. This paper presents contact mechanics models for the initiation of scratching in terms of the pad asperity geometry, the interfacial friction, and the mechanical properties of materials. Results of dry, wet and lubricated experiments on Cu coatings qualitatively validate the theoretical models. To mitigate scratching by pad asperities during CMP, the developed models suggest that the friction coefficient be kept below 0.2.