Abstract
We have analyzed the scintillation characteristics such as light yield and decay time and the radiation damage of Ce-doped Bi4Si3O12 (BSO) single crystals grown by the vertical Bridgman method. Ce was doped into BSO at 0.1, 0.2 and 0.4 at.% and the grown crystals were analyzed. For the Ce doping at 0.1 at.%, the light yield decreased by 40% while the average decay constant decreased by 20% (from 105 ns to 86 ns). Radiation damage was assessed by measuring the optical transmittance before and after irradiating the crystals with 60Co γ-rays for a maximum accumulated dose of 107 rad. Significant improvement was found for the radiation hardness of Ce-doped BSO.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
