Abstract
A scheme that combines the nonequilibrium Green’s function method with the Korringa–Kohn–Rostoker Green’s function method is proposed. The method is applied to Schottky junctions composed of an Al/GaN/Al trilayer. The results show that a Schottky barrier is formed at an undoped GaN and Al interface. The transport property of this system under various finite bias voltages is calculated. It is shown that the asymmetric behavior of electron transport against the direction of bias voltage occurs in this system, confirming the feature of rectification.
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