Schottky diodes with a δ-doped near-surface layer

Abstract

The influence of planar δ-doping on effective parameters of Schottky diodes has been studied by simulations of I–V curves within a drift-diffusion approximation. It is shown that an inserted δ layer with the same type of conductivity as that of the base semiconductor material has no significant influence on the effective Schottky diode parameters. The change of the potential barrier shape with the insertion of the δ-doped layer with the same type of conductivity as the base semiconductor material influences the diode current only slightly. On the other hand, significant changes were found for the Schottky diodes with the opposite type of δ-doped layer conductivity compared to the base semiconductor. The resultant barriers and the ideality factors both increase with increasing distance of the δ-doped layer from the metal–semiconductor interface.