Abstract
On a single GaN nanowire, obtained by chemical vapour deposition, severalSchottky-junction diodes were fabricated and their electrical transport propertieswere studied. Alternately attached metal electrodes of Al and Ti/Au formed aSchottky barrier junction (for Al) or an ohmic contact (for Ti/Au), resulting inseveral diodes on a single nanowire. The current–voltage measurements exhibitedclear rectifying behaviour and no reverse-bias breakdown was observed up to themeasured voltage, −5 V. The forward-bias threshold voltage was observed todecrease linearly with temperature, from 0.4 V at 280 K to 1 V at 10 K.
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