Schottky Diode Large-Signal Equivalent-Circuit Parameters Extraction for High-Efficiency Microwave Rectifying Circuit Design

Abstract

A novel parameter extraction method for the Schottky diode’s large-signal equivalent-circuit model is proposed, and used to design high-efficiency microwave rectifying circuits. This method extracts the nonlinear SPICE parameters in the equivalent-circuit from measured I-V and C-V data, and the linear parasitic parameters from the broadband small-signal S-parameters. Moreover, it employs a de-embedding technology that adopts an equivalent circuit to remove the influence of the test fixture in the S-parameters measurement, thereby additional TRL calibration kits are not required. As a sample, large-signal equivalent-circuit parameters of the Schottky diode with model number MA4E1317 are extracted by the proposed method. Then it was used to design two Class-F microwave rectifying circuits working at 2.45 GHz and 5.8 GHz, respectively. Owing to the high accuracy of the extracted parameters by the proposed method, the simulation results such as the large-signal transient voltage waveforms across the diode agree well with the measured ones. Furthermore, two rectifying circuits exhibit very high rectifying efficiencies (e.g., 83.5% at 2.45 GHz and 82.1% at 5.8 GHz with 16.8 dBm input power).