Abstract
Vertical structures based on Pd Schottky contacts to a ZnO/AZO bilayer have been realized and electrically characterized. Following a preliminary annealing study on the separated ZnO and AZO layers the ZnO/AZO bilayer was first annealed at 450 °C for 30 min to reduce the carrier concentration and then functionalized with a H2O2 dip prior to Pd deposition. On the basis of Atomic Force Microscopy, Transmission electron Microscopy and Capacitance vs Voltage measurements it has been found that the H2O2 treatment lowers the surface roughness and creates a ~200 nm thick layer formed by ZnO crystallites with grain size ≲10 nm embedded into an amorphous matrix with reduced carrier concentration. However, contrary to what previously reported no formation of ZnO2 has been observed. The obtained Schottky contacts showed a rectification ratio ≳102 at −2 V/+2 V with a detailed analysis based on the differential approach pointing to field enhanced emission from defective channels as the main leaking mechanisms.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
