Abstract
Unimplanted n-type GaAs epitaxial layers have been annealed under the same conditions as those required to activate ion implants. If the duration of the anneal is sufficiently long (e.g. 10 min at 800°C) acceptor ions accumulate at the surface with a concentration of about 2×1022 m−3. Schottky contacts to annealed samples always show increased current densities up to six orders of magnitude greater than those in unannealed layers. This has the effect of lowering the Q values of varactor diodes made out of this material, up to frequencies of 1 GHz.
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