Abstract
Utilizing the short lifetime of hot electrons, ultrasensitive hot-electron photodetectors with fast response speed can be developed that have the potential to carve a niche among the photoconductive devices. Herein, high-performance WSe2 photodetectors are fabricated based on hot-electron transportation, in which an ultrathin Al2O3 layer enables screening of high-energy hot electrons and promises ultrasensitive response to incident light, and the built-in electric field in Schottky junctions separates the photoinduced carriers for fast transient recovery. The hot-electron photodetectors demonstrated a high rectification ratio of 107 and an extremely low dark current of 1 pA/μm with a high Ilight/Idark ratio of 1.8 × 106. Moreover, a high responsivity of 3.69 A/W and detectivity of 2.39 × 1013 Jones at an incident light power of 5.0 μW/cm2 are simultaneously achieved. The present strategy offers an alternative route for ultrasensitive photodetectors with fast response.
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