Abstract
Signal transmissions between Schottky-electrode-triggered Gunn elements are investigated when an output electrode, also of Schottky type, is directly coupled to a trigger electrode of the next stage. Expressions are derived that describe the voltages across the two Schottky barriers when the barriers behave as pure capacitances. Also cases are studied where a conductive current flows through either of the barriers. In those cases, it is pointed out that excess electrons accumulate on the metal sides of the barriers after a cycle of potential changes at the semiconductor sides Experimental results agree well with those predicted by the present theory, and it is shown that the electron-accumulation phenomenon really takes place. Also a Gunn-effect memory device based on the above electron-accumulation phenomenon is proposed and demonstrated.
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