Abstract
The Schottky characteristics of Pt contacts fabricated on (11–22) semipolar n-type GaN were investigated. The saturation current density and the ideality factors obtained using the thermionic emission model were as large as 2.2 × 10−3 A/cm2 and 2.19, respectively, as a result of the strong leakage components in the currentvoltage curves. The barrier inhomogeneity model applied to the temperature dependent electrical data exhibited a mean barrier height of 1.1 eV with a large standard deviation of 169 meV. The thermionic field emission model yielded reliable Schottky parameters including a tunneling parameter of 0.054 eV and a Schottky barrier height of 1.23 eV.
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