Abstract
AbstractWe report measurements of Schottky barrier heights and minority carrier mobilitylifetime products of multilayer structures composed of a-Si:H,F and a-Si,Ge:H,F. These layers are grown by r.f. glow discharge decompostion of SiF4, GeF4, and H2 in the a-Si,Ge:H,F (well) layer and of SiF4 and H2 in the a-Si:H,F (barrier) layer.Schottky barrier height ΦB of Pt is measured using internal photoemission measurements. The minority carrier mobility-lifetime product (μτ)p is extracted from a fit of the voltage dependence of internal quantum efficiency to the Hecht expression. Both ΦB and (μτ)p are measured as a function of barrier and well thicknesses.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
