Abstract
The method of evaporation of starting targets with subsequent deposition onto glass substrates at temperatures of 480–720 K is used to grow homogeneous thin (0.6–1.5 μm) n-In2S3 films on which the In/n-In2S3 Schottky barriers were formed for the first time; evaporation was induced by a pulsed laser. The temperature dependence of resistivity of the films with the n-type conductivity was studied and the activation energy of donor centers in these films was determined. Spectral dependences of the photoconversion quantum efficiency η(ħω) for the barriers obtained were studied. An analysis of the spectral dependences η(ħω) made it possible to identify the type of band-to-band transitions and estimate the band gap in the In2S3 films. It is concluded that the thin In2S3 films can be used in broadband photoconverters of optical radiation.
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