Schottky barriers and contact resistances on p-type GaN

Abstract

We measured the Schottky barrier heights and specific contact resistivities of four different metals on p-type GaN. The Schottky barrier heights of Pt, Ni, Au, and Ti were obtained from the current-voltage characteristics to be 0.50, 0.50, 0.57, and 0.65 eV, respectively. The specific contact resistivities were 0.013, 0.015, 0.026, and 0.035 Ω⋅cm2, respectively. Our experimental results proved that the Schottky barrier heights and specific contact resistivities decrease with increase in metal work function as expected theoretically.