Abstract
Schottky barrier SOI-MOSFETs incorporating a La2O3/ZrO2 high-k dielectric stack deposited by atomic layer deposition are investigated. As the La precursor tris(N,N′-diisopropylformamidinato) lanthanum is used. As a mid-gap metal gate electrode TiN capped with W is applied. Processing parameters are optimized to issue a minimal overall thermal budget and an improved device performance. As a result, the overall thermal load was kept as low as 350, 400 or 500°C. Excellent drive current properties, low interface trap densities of 1.9×1011eV−1cm−2, a low subthreshold slope of 70-80mV/decade, and an ION/IOFF current ratio greater than 2×106 are obtained.
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