Abstract
In order to understand a substrate effect on photoresponse properties of diamond-based Schottky-barrier photodiode (SPD), we utilize a heavily boron-doped p +-diamond substrate for a thin epilayer growth and the SPD fabrication. Vertical- and planar-types SPD's show excellent rectifying property with ideality factor close to unity and on-resistance as small as 1 Ω·cm 2. Both the SPD's are operable in photovoltaic and reverse bias modes with a quantum efficiency of 2.2 ± 0.5% and does not provide a photoconductivity gain and a persistent photocurrent before and after annealing at 500 °C for 120 min. By comparing the photoresponse properties of SPD's on the p +-diamond substrate with on a Ib-diamond substrate, we conclude that a homojunction between p-diamond epilayer and Ib-diamond substrate governs a photo-carriers generation and a transport process, which produces an excellent spectral response property of SPD on the Ib-diamond substrate.
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