Abstract
Schottky barrier height modification (BHM) resulting from 0.5 keV He-ion bombardment of n- and p-GaAs (doping ∼10 16 cm −3) is investigated for doses between 5 × 10 10 and 5 × 10 14 cm −2. Current–voltage measurements reveal a decrease (0.95–0.63 eV) and an increase (0.63–0.70) in barrier height, for n- and p-GaAs, respectively, for the dose above. Electronic properties of defects introduced are investigated through DLTS, current–voltage ( I– V) and capacitance–voltage ( C– V) measurements. Furthermore, we compare defects from 0.5 keV and MeV He-ion irradiation in both n- and p-GaAs. Annealing n-GaAs reveal a correlation between the BHM and the density of He-ion induced defects.
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