Abstract
We reported here a systematic study of the annealing-induced changes in the barrier height of Schottky barrier diodes fabricated on atomically clean and contaminated surfaces. Al, Ag, Au, and Cr/GaAs(110) diodes were fabricated by in situ deposition on clean n-type GaAs(110) surfaces prepared by cleavage in ultrahigh vacuum and on contaminated surfaces prepared by cleavage and exposure to the atmosphere for ∼1–2 h. This study demonstrates that the as-deposited barrier height and the annealing-induced changes in the barrier height of diodes formed with an interfacial layer of contamination are distinctly different from the characteristics of diodes formed on clean semiconductor surfaces. The presence of an interfacial layer of contamination is found to significantly degrade the stability of the diode’s barrier height to annealing.
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