Schottky Barrier in Two-Carrier Model

Abstract

Electron and hole currents in barriers are analyzed. Divergence free electron and hole currents are introduced. GR currents in Schottky barrier devices are computed. GR currents in the space charge region are evaluated. The field influence in the barrier region is shown. A definition of the carrier density at the splitting boundary is given. Minority carrier density at the metal/semiconductor surface is given. A Schottky barrier with two carriers is analyzed. The governing set of equations including the continuity equation is introduced. Example set of parameters for Ge device is given. Boundary conditions are introduced. Example solutions for a thin device are given. The carrier distribution is computed. The Boltzmann region for minority carriers is identified. Demarcation lines are identified and the Shockley-Frank-Read recombination centers are introduces. Currents in the Schottky barrier are calculated. The Quasi Fermi levels and demarcation lines are given. The electron and hole density crossing is analyzed. A carrier inversion layer with consequences on space charge is discussed. Schottky barrier devices are analyzed. Medium width devices, boundary conditions, and general solution behavior is discussed. The Schottky barrier in wider devices and a violation of the van Roosbroek approximation is pointed out. The relative contribution of the divergence free and GR currents in barrier devices are discussed.