Abstract
The Schottky barrier heights for electrons and holes of erbium-silicided Schottky diodes were extracted from the current–voltage-temperature characteristics in reverse bias condition. The effective barrier heights increased with temperature. The highest effective barrier heights for electrons and holes were extracted to be 0.38eV and 0.67eV at the high temperatures, respectively. The effective barrier heights may be close to the temperature-independent barrier heights of erbium-silicided Schottky diodes since the sum of the two barrier heights for electrons and holes is close to the bandgap of silicon and the conduction mechanisms of carriers can be explained by the pure thermionic emission model at the high temperatures.
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