Abstract
The Schottky junction source/drain structure has great potential to replace the traditional p/n junction source/drain structure of the future ultra-scaled metal-oxide-semiconductor field effect transistors (MOSFETs), as it can form ultimately shallow junctions. However, the effective Schottky barrier height (SBH) of the Schottky junction needs to be tuned to be lower than 100 meV in order to obtain a high driving current. In this paper, microwave annealing is employed to modify the effective SBH of NiSi on Si via boron or arsenic dopant segregation. The barrier height decreased from 0.4–0.7 eV to 0.2–0.1 eV for both conduction polarities by annealing below 400 °C. Compared with the required temperature in traditional rapid thermal annealing, the temperature demanded in microwave annealing is ~60 °C lower, and the mechanisms of this observation are briefly discussed. Microwave annealing is hence of high interest to future semiconductor processing owing to its unique capability of forming the metal/semiconductor contact at a remarkably lower temperature.
Highlights
The tuning of Schottky barrier height (SBH) between metal silicide and underlying Si by the dopant segregation (DS) technique has recently been extensively explored for the development of integrated circuits of advanced technology nodes
We experimentally demonstrate SBH tuning with the DS technique with a low-temperature microwave annealing (MWA) process and explore the related mechanisms
silicide-induced dopant segregation (SIDS) scheme is adopted in the experiments due to its effectiveness [6,7] in SBH tuning and relatively simpler process flow compared with the silicide as a diffusion source (SADS) scheme
Summary
The tuning of Schottky barrier height (SBH) between metal silicide and underlying Si by the dopant segregation (DS) technique has recently been extensively explored for the development of integrated circuits of advanced technology nodes. Materials 2016, 9, 315 into the metal silicide/Si interface and tune the effective SBH towards 100 meV, mainly two DS schemes have been explored: silicide-induced dopant segregation (SIDS) [6,7] and silicide as a diffusion source (SADS) [6,7,8]. In both cases, the dopants are driven and segregate at the silicide/Si interface by a thermal treatment such as the rapid thermal annealing (RTA) process. SIDS scheme is adopted in the experiments due to its effectiveness [6,7] in SBH tuning and relatively simpler process flow compared with the SADS scheme
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