Abstract
TaN film with various N contents was formed to provide ohmic contact on n-type Ge. Schottky barrier heights (SBH) of the TaN/n-Ge and TaN/p-Ge contacts were carefully investigated by low-temperature I-V measurement. The SBH was modulated from 0.54 eV for Ta/n-Ge to 0.30 eV for TaN/n-Ge. The SBH lowering on n-Ge was found to be linear with the N contact x in TaNx, which confirmed the interfacial dipoles layer model. Deposition of TaN on plasma-treated Ge surface showed that the surface damage is not the reason for the low SBH on n-Ge. On the contrary, SBH modulation effect vanished on the rough Ge surface due to deconstruction of the interfacial dipoles layer.
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